Radiation Damage of Polydimethylsiloxane and Polyimide by X-ray Free-Electron Laser

A crystal delivery system is essential in serial femtosecond crystallography experiments using an X-ray free-electron laser (XFEL). Investigating the XFEL-induced radiation damage to materials potentially applicable sample devices vital for developing a system. In this study, we investigated caused by XFEL polydimethylsiloxane (PDMS) and polyimide (PI), which are widely used as synchrotron X-rays. Upon exposure, PDMS film produced irregularly shaped sized holes, whereas PI relatively regular holes. When XFELs were exposed channel of PDMS-based microfluidic device, holes generated on device internal region structurally destroyed. The PI-based experienced no structural destruction, except XFEL. However, continuously exposed, bubbles from solution due damage; accumulation these interfered with path inner device. Our results will not only help understand phenomenon films XFEL, but also provide insight into directions pursue applications studies.